Combined dgree, Sungkyunkwan Univ.
Investigation of the evolution of nitrogen defects in flash-lamp-annealed InGaZnO films and their effects on thransistor characteristics
InGaZnO (IGZO)-based thin-film transistors (TFTs) fabricated by sol-gel method need thermal annealing (TA) at high temperatures (from 300 to 500 °C), which are not compatible with polymer substrates for applying to flexible application . Flash lamp annealing (FLA) is one of low-temperature route using pulsed light with millisecond control, thus limiting heating to only surface or subsurface regions. In this presentation, we show possible differences in chemical bonding and electrical properties between thermally annealed and flash-lamp-annealed films, especially focusing on the evolution of nitrogen defects. The FLA of the IGZO TFT for 16 s helps achieve a mobility of approximately 7 cm 2 V -1 s -1 . However, further extension of the annealing time results only in drastic increases in carrier concentration and off current. The X-ray photoelectron spectroscopy (XPS) analysis of the N 1s peak unravels the presence of oxygen-vacancy-associated nitrogen defects and their evolution with annealing time, which is possibly responsible for the increase in carrier concentration.
Tae-yil Eom is a member of the Applied Electronic Materials Lab. in Sungkyunkwan university (South Korea). He began combined degree from 2015 majoring nanotechnology. Specifically, he have done and is doing research on IGZO-based thin film transistor and MoS2-based gas sensor.
Sungkyunkwan university is a prestigious private comprehensive research university in South Korea, which has close partnership with Samsung. The university is regarded as one of the most research-oriented universities in South Korea, placing it within top five universities in the country.